Product Name: Tantalum Disilicide (TaSi2) 
Specification: 0.8-10um (D50) 
Appearance: Irregular 
Color: Black Grey 
Features: high hardness, high melting point, oxidation resistance, and excellent thermal and electrical conductivity 
Application: Integrated circuits, aerospace, engines and other fields

Name: Tantalum Silicide 

Chemical formula: TaSi2 

Cas：12067-56-0 

Melting point: 2200 ℃ 

Density: 9.14g/cm 

The use of tantalum silicide: 

Tantalum disilicide has excellent properties such as high melting point, low resistivity, corrosion resistance, high temperature oxidation resistance, and good compatibility with silicon, carbon, etc. Mainly used in electric heating elements, high-temperature structural components, gate materials, connection lines of integrated circuits, high-temperature anti-oxidation coatings, metal ceramics, ceramic based composite materials, aerospace, engines and other fields. 

Application areas: 1) Preparation of silicon nitride tantalum silicide composite ceramic materials. The silicon nitride tantalum silicide composite ceramic material is composed of the following raw materials (by weight): 92-98 parts of silicon nitride powder, 12-15 parts of tantalum silicide powder, 3-6 parts of neodymium powder, and 2-5 parts of rhodium oxide powder. 

2) For tantalum silicide coatings, the described method includes using tantalum silicide powder with a particle size range of 10 to 120 microns and a purity greater than 95wt%. The tantalum silicide powder is sprayed onto the high-temperature resistant surface of the substrate material through vacuum plasma spraying or low-pressure plasma spraying processes. The plasma spraying process parameters are: plasma gas Ar: 30-50SLPM; Plasma gas H2: 8-18 SLPM; Powder carrier gas Ar: 1.55slpm; Spray distance: 100-350mm; Spray power: 30-58kw; Powder delivery amount: 8-30g · min-1; Spray pressure: 100-800mbar. 

Preparation of Tantalum Silicide: 

1. Using tantalum metal and silicon powder as raw materials, the tantalum metal and silicon powder are crushed and mixed evenly. Then, they are placed in a graphite furnace and heated to 1100-1500 ℃ for pre reaction. Hydrogen gas is then introduced and heated to 800 ℃ for reaction, resulting in tantalum silicide. Alternatively, tantalum hydride can be obtained by reducing tantalum pentoxide with calcium hydride, followed by heating to 1800 ℃ to obtain metallic tantalum, and then adding silicon powder to synthesize tantalum silicide. 

2. Preheat the mixture of Si and Ta to 350 ℃, then raise the temperature to 1480 ℃ and heat the reaction. Alternatively, TaS2 can be reacted with SiHnX4-n at 900 ° C. 

3. The direct method is used to prepare tantalum silicide from tantalum metal and silicon powder, and the reaction equation is as follows. 

Firstly, metal tantalum and silicon powder are crushed and mixed evenly. Then, they are placed in a graphite furnace and heated to 1100-1500 ℃ for pre reaction. Then, hydrogen gas is introduced and heated to 1800 ℃ for homogenization reaction for 1 hour to obtain tantalum silicide.